Year 2010
Authors Ching-Yuan Ho, Y. F. Chen, C. W. Ho, Wei. Chang, S. W. Chou, and J. Gong
Paper Title Retention Behavior Using SiN Spacers Charging on nMOSFETs for Future Nonvolatile Memory Application
Journal Title Journal of The Electrochemical Society
Vol.No 158
Issue.No 5
From H536
To H539
Level Type SCI
Date of Publication 2011-05-01