| 年度 | 2015 |
|---|---|
| 全部作者 | Shih-Hung Lin, You-Lin Wu, Yu-Huei Hwang , Jing-Jenn Lin |
| 作者類別 | First Author |
| 論文名稱 | Study of Radiation Hardness of HfO2-based Resistive Switching Memory at Nanoscale by Conductive Atomic Force Microscopy |
| 期刊名稱 | Microelectronics reliability |
| 卷數 | 55 |
| 期數 | 11 |
| 起頁 | 2224 |
| 迄頁 | 2228 |
| 期刊等級 | SCI,EI |
| 總頁數 | 5 |
| 語言 | 英文 |