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立創光電盃論文競賽活動手冊

  • 2019-06-21
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Organizing Committee第四屆立創盃2019/06/22

Honorary Chairs:                                               

王茂駿(東海大學)        王立志(東海大學)

楊怡寬(東海大學)       

General Chairs:                                                

程子桓(立創光電)        林士弘(東海大學)

劉日新(東海大學)        王小璠(東海大學)

吳士駿(東海大學)        周忠信(東海大學)

Technical Program committee:                                    

謝卓帆(工業技術研究院)  游瑞松(亞洲大學)

藍宇彬(交通大學)        廖美儀(屏東科技大學)

李 偉(交通大學)        黃志嘉(成功大學)

陳政營(台灣大學)        沈俊旭(東海大學)

施啟煌(司博創意科技)    陳繶文(立創光電)

洪振傑(逢甲大學)        林育儒(東海大學)

黃家逸(東海大學)        張源杰(東海大學)

楊朝棟(東海大學)         翁紹仁(東海大學)

賴英煌(東海大學)        王迪彥(東海大學)

林其昌(東海大學)        龔 正(東海大學)

徐昕煒(東海大學)        謝宛霖(東海大學)

蔡坤霖(東海大學)               苗新元(東海大學)

邱浩修(東海大學)        溫志宏(東海大學)

鐘玉芳(東海大學)            翁峻鴻(東海大學)

王怡然(東海大學)            陳錡楓(東海大學)

蔣惟丞(東海大學)            陳俊宏(東海大學)

General & Publication Chair:                                     

熊一鳴(東海大學)            陳信成(東海大學)

陳智偉(東海大學)            陳冠宇(東海大學)

吳岳霖(東海大學)

Registration staff:                                              

黃耀生(東海大學)            黃偉豪(東海大學)

車美瑩(東海大學)            吳昱儒(東海大學)

陳圓照(東海大學)            魏廷祐(東海大學)

陳忠奕(東海大學)            李宜哲(東海大學)

彭程農(東海大學)

 

 

第四屆立創盃論文競賽Agenda  2019/6/22東海大學

時間

主題

Venue

語文館(LAN)007

0900

0920

 開幕致詞:

東海大學工學院 楊怡寬院長

立創光電股份有限公司 程子桓董事長

東海大學電機工程學系 溫志宏教授

0920

0955

  主題演講()Color-switchable and white-light liquid-crystal lasing

                                   in one-dimensional photonic bandgap

       Speaker:國立交通大學光電學院 李偉 教授

               主持人:東海大學電機工程學系 林士弘 教授

0955

1030

  主題演講()Development of Rechargeable Al ion Battery and Related

                               Mechanism Studies by In-situ Spectroscopic Technique

                  Speaker:東海大學化學系 王迪彥 教授

              主持人:東海大學電機工程學系 林士弘 教授

1030

1050

Tea Break

1050

1205

論文評選() 12*6

1205

1340

午餐及教堂前留影

1340

1450

論文評選() 11*6

1450

1510

Tea Break / 公布最佳人氣獎

1510

1545

 主題演講(三):Highly Efficient Earth-abundant Kesterite based

          Cu2ZnSn(S,Se)4 (CZTSSe) by Defect-controlled and

         Interface/Contact Engineering

               Speaker:台灣大學凝態中心 陳政營 研究員

                主持人:東海大學電機工程學系 林士弘 教授

1545

1620

     主題演講() : 太陽光電計量與非破壞量測技術

               Speaker:工業技術研究院 謝卓帆 主任

                主持人:東海大學電機工程學系 林士弘 教授

1620

1700

頒獎


 
 

 
 

 

Plenary Speech (1)

Color-switchable and white-light liquid-crystal lasing in one-dimensional photonic bandgap structures

 

Wei Lee (李偉)

Institute of Imaging and Biomedical Photonics

College of Photonics, National Chiao Tung University

Guiren Dist., Tainan 71150, Taiwan

wlee@nctu.edu.tw

 

 

Incorporation of liquid crystal (LC) as a defect layer in a photonic crystal (PC) permits the electrically tunable transmission spectrum of defect modes within the photonic bandgap. This tunability makes such a hybrid structure potentially beneficial for designing various types of optical devices. Recently, we have demonstrated several distinctive photonic bandgap structures based on one-dimensional (1-D), multi-layered PCs containing memory-incapable or memory-enabling LC as a defect layer. The optical state remains unchanged after removal of applied voltage in the memory state. Owing to the wavelength tunability, amplitude tunability and optical multistability of the defect modes, these 1-D hybrid structures are intriguing for photonic device applications such as low-power-consumption multichannel filters, light shutters and electrically controllable intensity modulators without the need of any polarizers.

In this presentation, our development of various PC/LC structures for photonic applications will be presented. Special attention will be paid to lasing from 1-D photonic bandgap structures comprising dye-doped LCs. An asymmetric photonic bandgap structure will be explored in a case study where dye-doped nematic LC is employed to generate ultralow-threshold, single-mode lasing. Moreover, I shall highlight color-switchable and white-light laser devices along this line using dye-doped cholesteric LC confined in a photonic bandgap structure with an unconventional design for the dielectric mirrors.

 

 

 

Plenary Speech (2)

Development of Rechargeable Al ion Battery and Related Mechanism Studies by In-situ Spectroscopic Technique

 

Di-Yan Wang (王迪彥)

Department of Chemitsry, Tunghai University.

 

  Developing new earth-abundant materials has been attracted more and more attention for energy storage applications. In this talk, I would like to talk about our recent work related to development of Aluminum ion battery (AIB). AIB was demonstrated recently based on Al foil anode, graphite cathode and ionic liquid electrolyte. Much remains to be done to increase the cathode capacity and to understand details of the anion-graphite intercalation mechanism. Here, we developed a freestanding film of natural graphite flakes bound by a binder as AIB cathode. The specific capacity and Coulombic efficiency of the battery was achieved ~110 mAh/g and ~98% respectively, at a current density of 99 mA-g-1 with clear discharge voltage plateaus ~2V. The cycle stability of the battery exceeded 6000 cycles with a capacity of 60 mAh/g at a current density of 660 mA/g. Raman spectroscopy, Xray diffraction, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy data elucidated chloroaluminate intercalation in natural graphite. Finally, theoretical calculations were employed to investigate the intercalation behavior of choloraluminate anions in the graphite electrode.

 


 

Plenary Speech (3)

  Highly Efficient Earth-abundant Kesterite based Cu2ZnSn(S,Se)4 (CZTSSe) by Defect-controlled and Interface/Contact Engineering

 

Cheng-Ying Chen (陳政營)

Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

 

 

Chalcogenide based thin-film photovoltaics (PVs) with a direct bandgap such as CdTe and Cu(In,Ga)Se2 (CIGSe) have achieved remarkable over 20% power conversion efficiency (PCE) but the toxicity of cadmium (Cd), and the scarcity of indium (In) and tellurium (Te) may restrict the production capacity for a growing worldwide power consumption (~terawatt). Therefore, kesterite based Cu2ZnSn(S,Se)4 (CZTSSe) have emerged as a potential alternative for CdTe and CIGSSe absorbers due to the use of non-toxic and earth-abundant elements and providing desirable optoelectronic properties, similar to CIGSSe.

For single junction solar cells, it has theoretically predicted that kesterite materials have potential to achieve efficiency more than 30% due to their exceptional physical properties such as high absorption coefficient (~104 cm-1), tunable (with S/Se ratio) and direct band gap of 1-1.5 eV. However, the best PCE, among all reported values, of CZTSSe solar cells is around ~12.6% by IBM’s toxic hydrazine method, still far from the expectation. The main bottleneck of CZTSSe is its lower open circuit voltage (open circuit voltage deficit, Eg/q-VOC < 0.5V in CIGSSe, whereas typical Eg/q-VOC > 0.6V in CZTSSe.), likely resulting (A) from bandgap fluctuation and electrostatic potential fluctuation: these fluctuations origin from (1) spatial variation in composition and (2) material defects or defect complexes (such as [CuZn- + ZnCu+] and [SnZn 2++ 2CnZn-]), which usually happen near the grain boundaries; (B) a non-optimal conduction band-

alignment between the p-type CZTSSe absorber and the n-type buffer layers; and (C) contact losses/band-alignment due to the mismatch of the work function/bandgap offset.

  Actually, for non-Ohmic contacts in PV devices (i.e., existing Schottky barriers), the VOC will be limited by the work function difference between the top and the bottom electrodes, instead of quasi-fermi level splitting in absorbers.

In past few years, we used the following several strategies to address the critical issue, (1) enhancing the inter-diffusion of each metals in precursors (Cu, Zn, and Sn) for synthesizing high-quality CZTSSe thin-film without the fine-grain bi-layers, (2) CZTSSe defect-controlled engineering by introducing a few Ge to suppress SnZn antisite defects: the multivalent character of Sn (Sn2+and Sn4+) is problematic; the Sn2+ can create deep defects, and the Sn-related defects act as non-radiative recombination centers for the photo-excited electrons and holes, producing a large Voc deficit, which limits the device performance, (3) inserting an intermediate nanolayers, specifically MoO3, at the CZTSSe/Mo back contact interface for suppressing the formation of harmful Mo(S,Se)2 layer due to interfacial reaction (from ~350 nm to ~100 nm), and (4) inserting alkali metal fluoride interfacial layers as electron-selective contacts. Recently, the PCE of our earth-abundant/non-toxic CZTSSe solar cells can reach to 10.4%. If only considering the effective cell area, our PCE can be above 11.5%.

Actually, we have also started to establish the correlation between the electronic structures near grain boundaries and photocarrier separations in this class of chalcogenide PVs. We believe that, not only the engineering perspective approach for the progress of PCE, but also a significantly improved understanding of the electronic structures will eventually make technological breakthrough possible in this earth-abundant kesterite based materials (CZTSSe) in the near future.

 


 

 

Plenary Speech (4)

Photovoltaic Metrology and Non Destructive Detection Technology

(太陽光電計量與非破壞量測技術)

 

Cho Fan Hsieh (謝卓帆)

Industrial Technology Research Institute (工業技術研究院)

 

Introduction to testing, verification and calibration for solar photovoltaic cells, modules and inverters. The technologies are based on IEC, UL and CNS international standards.

On the other hand, Terahertz non-destructive investigation technologies and application are also introduced.

 

介紹國際標準之太陽光電電池、模組與變流器之測試、驗證與校正技術。另一方面介紹非破壞兆赫波量測技術與其應用。

 

會場暨停車場位置圖