東海大學電機工程學系

●K. H. Lo, C. H. Huang, W.T. Weng, T. Y. Huang, H. D. Su, J. Gong, and C. F. Huang, "Ultralow Capacitance Transient Voltage Suppressor Design," IEEE Transactions on Electron Device., vol.105, no.63, pp.8, Aug.2016.
　

●Ying-Chieh Tsai, Jeng Gong, Wing-Chor Chan, Shyi-Yuan Wu and Chenhsin Lien, "The Conduction Characteristics of a 700V Lateral Insulated-gate Bipolar Transistor in a Junction Isolation Technology," IEEE Electron Device Letters., vol.104, no.36, pp.9, Sep.2015.
　

●Da-Cheng Huang, Jeng Gong, Chih-Fang Huang, and Steve S, Chung, "The impact of positive bias temperature instabilities on stacked high-k/metal gate transistor with TiN barrier layer," Jpn. J. App. Phys., vol.103, no.54, pp., Jan.2015.
　

●Chung-Yu Hung*, Tzu-Cheng Kao, Jian-Hsing Lee, Jeng Gong, Kuo-Hsuan Lo, Hung-Der Su, Chih-Fang Haung, "Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded pnp BJT," IEEE Electron Device Letters,., vol.103, no.35, pp.10, Oct.2014.
　

●Fu-Jen Yang ; Jeng Gong ; Ru-Yi Su ; Chun-Lin Tsai ;Hsiao-Chin Tuan ; Chih-Fang Huang, "RESURF p-n Diode With a Buried Layer, a Comprehensive Study," IEEE Transactions on Electron Devices., vol.102, no.60, pp.11, Nov.2013.
　

●F.J. Yang, J. Gong, R.Y. Su, K.H. Huo, C.L. Tsai, C.C. Cheng, R.S. Liou, H.C. Tuan, and C.F. Huang, "A 700V Device in High Voltage Power ICs with Low On-State Resistance and Enhanced SOA," IEEE Transactions on Electron Devices., vol.102, no.60, pp.9, Sep.2013.
　

●Hsueh-Liang Chou, Chih-Fang Huang, Jeng Gong, "Dimension Dependence of Unusual HCI-Induced Degradation on N-channel High-Voltage DEMOSFET," IEEE Transactions on Electron Device., vol.101, no.60, pp.5, May2013.
　

●Da-Cheng Huang, Jeng Gong, Chih-Fang Huang, "Investigation of Positive and Negative Bias Temperature In stability of High-k Dielectric Metal Gate MOSFET by Random Telegraph Signal," Jpn. J. Phys., vol.101, no.52, pp., Mar.2013.
　

●Yi-Rong Tu, Jeng Gong, "The Study of Improving High Voltage LIGBT Substrste Leakage Current," Applied Mechanics and Materials., vol.101, no.263-266, pp., Jan.2013.
　

●Hsueh-Liang Chou, Jacky C. W. Ng, Ruey-Hsin Liou, Yu-Chang Jong, Hsiao-Chin Tuan, Chin-Fang Huang, Jeng Gong, "The Effect of Self-Heating in LDMOSFET Expansion Regime," IEEE Transaction on Electron Devices., vol.101, no.59, pp.11, Nov.2012.
　

●Chen-Liang Chu, Chih-Min Hu, Chung-Yu Hung, Jeng Gong, Chih-Fang Huang, Fei-Yun Chen, Ruey-Hsin Liou, and Hsiao-Chin Tuan, "The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs," IEEE TRANSACTIONS ON ELECTRON DEVICES., vol.100, no.59, pp.4, Apr.2012.
　

●C.-L. Chu, C.-M. Hu, J. Gong, C.-F. Huang, C.-L. Tsai, F.-Y. Chen, R.-H. Liou and H.-C. Tuan, "Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs’ I-V characteristics," ELECTRONICS LETTERS ., vol.100, no.48, pp.2, Jan.2012.
　

●"Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Jih-Hsin Liu, Jeng Gong and Chih-Fang Huang, "The parameter extraction including field plate effect of 0.25um 12V LDMOSFETs," SEMICONDUCTOR SCIENCE AND TECHNOLOGY., vol.100, no., pp., Dec.2011."
　

●"Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Chih-Fang Huang, Jeng Gong, and Ching-Yu Chen, "Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss," IEEE TRANSACTIONS ON ELECTRON DEVICES., vol.99, no.58, pp.6, Jun.2011."
　

●"Wen-Shan Lee, Cheng-Wei Lin, Ming-Hsien Yang, Chih-Fang Huang, Jeng Gong, and Zhao Feng , "Demonstration of 3500-V 4H-SiC Lateral MOSFETs," IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 3, MARCH 2011., vol.99, no.32, pp.3, Mar.2011."
　

●Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Chia-Tien Lee, "High-Performance 1-μm GaN n-MOSFET With MgO/MgO–TiO2 Stacked Gate Dielectrics," IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 3, MARCH 2011., vol.99, no.32, pp.3, Mar.2011.
　

●"Ching-Yuan Ho,Y. F. Chen, C. W. Ho, Wei. Chang, S. W. Chou, and J. Gong, "Retention Behavior Using SiN Spacers Charging on nMOSFETs for Future Nonvolatile Memory Application," Journal of The Electrochemical Society., vol.99, no., pp., Mar.2011."
　

●Tang-Jung Chiu, Jeng Gong, Ya-Chin King, Chih-Cheng Lu, and Hsin Chen, "An Octagonal Dual-Gate Transistor With Enhanced and Adaptable Low-Frequency Noise," IEEE ELECTRON DEVICE LETTERS., vol.99, no.32, pp.1, Jan.2011.
　

●K. T. Lee, C. F. Huang, J, Gong, "High Quality MgO/TiO2/MgO Nanolaminates on p-GaN MOS Capacitors," IEEE Electron Device Letters., vol.98, no.31, pp.6, Jun.2010.
　

●R. Y. Su, P. Y. Chiang, J. Gong, "LDMOSFET with Dielectric Modulated Drift Region," Electronic Letters., vol.98, no.46, pp., Mar.2010.
　

●y. H. Lin, C. H. Chu, J. Gong, "Design of DC to 10-GHz broadband CMOS transmit/receive switch circuits," Microwave and Optical Technology Letters., vol.98, no., pp., Feb.2010.
　

●Chun-Hsueh Chu, Yih-Hsia Lin, Da-Chiang Chang, Jeng Gong and Ying-Zong Juang, "A wideband 27-dBm CMOS T/R switch using stacking architecture, high substrate isolation, and RF floated body," International Journal of Electronics., vol.98, no.96, pp.9, Sep.2009.
　

●Y. F. Chen, J. Gong, W. J. Tung, S. W. Chou, E. S. Jeng, "Characteristics of n-Channel MOSFETs with Tailored Source/Drain Extension for Mask ROM and EEPROM Applications," IEEE Transactions on Electron Devices., vol.98, no.56, pp.9, Sep.2009.
　

●Chun-Hsueh Chu, I-Lun Huang, Yih-Hsia Lin and Jeng Gong , "A 5.7-GHz low noise amplifier with source-degenerated active inductor," Microwave and Optical Technology Letters., vol.98, no.51, pp., Aug.2009.
　

●Yih-Hsia Lin, Chun-Hsueh Chu, Da-Chiang Chang, Jeng Gong and Ying-Zong Juang, "Design of CMOS T/R switch using high substrate isolation and RF floated body for 1.9-GHz applications," Microwave and Optical Technology Letters., vol.97, no.51, pp., Jun.2009.
　

●K. T. Lee, C. F. Huang, J. Gong, and B. H. Liou, "Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN with Post-metallization Annealing and (NH4)2SX Treatments," IEEE Electron Device Letters., vol.97, no.30, pp., Jun.2009.
　

●K. T. Lee, Y. C. Lee, J. Y. Chang, and J. Gong, "Improvement on Optical Properties of GaN Light-Emitting Diode with Mesh-textured Sapphire Back Delineated by Laser Scriber," IEEE Photonics Technology Letters., vol.97, no.21, pp.7, Apr.2009.
　

●R. Y. Su, P. Y. Chiang, J. Gong, T. Y. Huang, C. L. Tsai, C. C. Chou and C.M. Liu, "Experimental results of On-state Resistance Reduction by STI Fingers in LDMOSFET," IEEE Electron Device Letters., vol.97, no.30, pp.2, Feb.2009.
　

●S. P. Yeh, C. H. Shih, J. Gong, and C. Lien, "Latent Noise in Schottky Barrier MOSFETs," J. Stast. Mech., vol.97, no., pp., Jan.2009.
　

●M. H. Xie1, L. C. Kao, and J. Gong, "Pattern Engineering in Smart-cut SOI before Bonding for LIGBT," The 2017 International Conference on Innovation, Communication and Engineering (ICICE 2017), 中國,昆明市, Nov.05-11,2017. (EI)
　

●Y.S.Chang, L.C.Kao, and J.Gong, "The Effect of Buffer Layer Location on LIGBT," The 2017 International Conference on Innovation, Communication and Engineering (ICICE 2017),  中國,昆明市, Nov.05-11,2017. (EI)
　

●Chia-Hui Cheng* and Jeng Gong, "The Pattern Engineering before Wafer Bonding in Smart-cut SOI for High Voltage Application," 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, CHN,  Guilin, China, Oct.28-31,2014.
　

●CHIA-HUI CHENG* and J. GONG, "A Patterned Smart Cut Silicon-on-Insulator High Voltage Device," The 2nd Annual Conference on Engineering & Information Technology, 日本,東京, Mar.28-30,2014.

●鍾其斌, 龔正, "3-Dimemsional Round Super Junction Diode," International Electron Devices and Materials Symposium (IEDMS), 台灣,高雄.
　

●洪崇祐,羅國軒,龔正, "A 0.25μm High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction," 2012 International Conference on Solid Sate Device and Materials, 日本, 京都.
　

●涂宜融,龔正, "The Study of Improving High Voltage LIGBT Substrate Leakage Current," International Conference on Information Technology and Management Innovation, 中國 廣州.
　

●簡士傑, 龔正, "The power switch with built-in snubber works for flyback circuit," International Electron Devices and Materials Symposium (IEDMS), 台灣,高雄.
　

●洪崇祐,龔正, "High Voltage JFET with Adjustable Pinch-off voltage," International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China.
　

●胡智閔,龔正, "RF Characteristics of A High Voltage LDMOSFET," International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China.
　

●K. T. Lee, J. Gong, and B. H. Liou, , "Electrical Characteristics of Al2O3/TiO2 Nanolaminate Dielectrics on GaN," 215th ECS Meeting, San Francisco.
　

●C. T. Lee, K. T. Lee, and J. Gong, "Electrical Characterization of High-k Anodic Aluminum Oxide Gate Dielectrics on Gallium Nitride Substrate MOS Capacitors," 215th ECS Meeting, San Francisco.